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知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
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You are able to modify the stated parameters, and Evaluate it that has a "great" consequence which requires two several hours siumlation time. Based upon your criteria, you'll be able to increase the simulation time.
So can someone make sure you describe how FET with minimal threshold voltage has increased pace and higher leakage current whilst FET with substantial threshold might be sluggish but very low on power?
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
That means I should simulate the circuit plenty of times to obtain the effects but The problem is that every simulation takes about two hrs and just makes the operate very slow.
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I'd same challenge with PICs , cek tat the sample information run in ordinary speed, i cudnt correct the issue fully, try eliminating the crystal and putting mcu pace at 1Mhz in its Houses
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Certainly due to the fact in LVT threshhold voltage is minimal turning on from off posture is going to be fast, but what about turning off the system from on posture? because threshhold voltage is minimal (0.2V) If your applied gate voltage is 1V it will require to fall atleast 0.8V to show from the LVT transistor.
In the event of lvt, conc. of doping and oxide thickness is a lot more Look at to hvt.. Which the reason that much more the click here doping, so much more speed and more leakage compare to hvt.
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